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@ARTICLE{Manheller:20333,
author = {Manheller, M. and Trellenkamp, S. and Waser, R. and
Karthäuser, S.},
title = {{R}eliable fabrication of 3 nm gaps between nanoelectrodes
by electron-beam lithography},
journal = {Nanotechnology},
volume = {23},
issn = {0957-4484},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {PreJuSER-20333},
pages = {125302},
year = {2012},
note = {The authors gratefully acknowledge the help of N Babajani,
MGrates, R Borowski and H Haselier. This work was partially
supported by the EU FP7 project 'MOLOC' and the 'Deutsche
Forschungsgemeinschaft' (DFG).},
abstract = {The reliable fabrication of nanoelectrode pairs with
predefined separations in the few nanometer range is an
essential prerequisite for future nanoelectronic devices.
Here we demonstrate a fine-tuned electron-beam lithographic
(EBL) fabrication route which is suitable for defining
nanoelectrode pairs with a gap size down to 3 ± 1 nm and
with a yield of $55\%.$ This achievement is based on an
optimized two-layer resist system in combination with an
adopted developer system, as well as on an elaborated
nanoelectrode pattern design taking into consideration the
EBL inherent proximity effect. Thus, even a structural
control in the nanometer scale is achieved in the EBL
process.},
keywords = {J (WoSType)},
cin = {JARA-FIT / PGI-7 / PGI-8},
ddc = {530},
cid = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106 /
I:(DE-Juel1)PGI-8-20110106},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Nanoscience $\&$ Nanotechnology / Materials Science,
Multidisciplinary / Physics, Applied},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:22414820},
UT = {WOS:000301662400005},
doi = {10.1088/0957-4484/23/12/125302},
url = {https://juser.fz-juelich.de/record/20333},
}