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| Hauptseite > Publikationsdatenbank > Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography > print |
| Hauptseite > Publikationsdatenbank > Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography > print |
| 001 | 20333 | ||
| 005 | 20180208232402.0 | ||
| 024 | 7 | _ | |2 pmid |a pmid:22414820 |
| 024 | 7 | _ | |2 DOI |a 10.1088/0957-4484/23/12/125302 |
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| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Nanoscience & Nanotechnology |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Manheller, M. |b 0 |u FZJ |0 P:(DE-Juel1)VDB74421 |
| 245 | _ | _ | |a Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography |
| 260 | _ | _ | |a Bristol |b IOP Publ. |c 2012 |
| 300 | _ | _ | |a 125302 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Nanotechnology |x 0957-4484 |0 4475 |y 12 |v 23 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a The authors gratefully acknowledge the help of N Babajani, MGrates, R Borowski and H Haselier. This work was partially supported by the EU FP7 project 'MOLOC' and the 'Deutsche Forschungsgemeinschaft' (DFG). |
| 520 | _ | _ | |a The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process. |
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| 700 | 1 | _ | |a Waser, R. |b 2 |u FZJ |0 P:(DE-Juel1)131022 |
| 700 | 1 | _ | |a Karthäuser, S. |b 3 |u FZJ |0 P:(DE-Juel1)130751 |
| 773 | _ | _ | |a 10.1088/0957-4484/23/12/125302 |g Vol. 23, p. 125302 |p 125302 |q 23<125302 |0 PERI:(DE-600)1362365-5 |t Nanotechnology |v 23 |y 2012 |x 0957-4484 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1088/0957-4484/23/12/125302 |
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