%0 Conference Paper
%A Dai, Yang
%A Schubert, Jürgen
%A Hollmann, Eugen
%A Wördenweber, Roger
%T Engineering the ferroelectric and resistivity Properties of Oxide Films via Compressive and Tensile Strain
%M FZJ-2015-05540
%D 2015
%X Strain can strongly modify the electronic characteristics of oxide materials. For instance the phase transition from the ferroelectric to the dielectric state can be shifted by up to 300 K in either directions. As a result, room temperature permittivity can be enhanced significantly, e.g. for SrTiO3 from εRT≈600 to εRT≈25000. Moreover the resulting ferroelectrics are highly anisotropic and show a number of properties that are extremely interesting for various applications. In this work we try to perform a systematic study of the impact of strain on the system BaxSr(1-x)TiO3. Films with different stoichiometric and thickness are epitaxially grown on DyScO3, TbScO3 and GdScO3 substrates. The lattice mismatch between substrate and film leads to different in-plane compressive and tensile strain within -1.5% to 1.5% in these systems. Tensile strain causes an increase of the in-plane ferroelectric dielectric phase transition temperature, while compressive strain decreases the transition temperature. The films show a metal-insulator transition and an extremely large tunability, they represent relaxor-type ferroelectrics and the ferroelectric properties are highly anisotropic. The data are discussed in terms of existing model for relaxor-type ferroelectrics. The potential of these films for sensors (e.g. surface or bulk acoustic wave devices) is examined.
%B International School of Oxide Electronics
%C 12 Oct 2015 - 24 Oct 2015, Cargèse (France)
Y2 12 Oct 2015 - 24 Oct 2015
M2 Cargèse, France
%F PUB:(DE-HGF)24
%9 Poster
%U https://juser.fz-juelich.de/record/205036