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@INPROCEEDINGS{Dai:205036,
      author       = {Dai, Yang and Schubert, Jürgen and Hollmann, Eugen and
                      Wördenweber, Roger},
      title        = {{E}ngineering the ferroelectric and resistivity
                      {P}roperties of {O}xide {F}ilms via {C}ompressive and
                      {T}ensile {S}train},
      reportid     = {FZJ-2015-05540},
      year         = {2015},
      abstract     = {Strain can strongly modify the electronic characteristics
                      of oxide materials. For instance the phase transition from
                      the ferroelectric to the dielectric state can be shifted by
                      up to 300 K in either directions. As a result, room
                      temperature permittivity can be enhanced significantly, e.g.
                      for SrTiO3 from εRT≈600 to εRT≈25000. Moreover the
                      resulting ferroelectrics are highly anisotropic and show a
                      number of properties that are extremely interesting for
                      various applications. In this work we try to perform a
                      systematic study of the impact of strain on the system
                      BaxSr(1-x)TiO3. Films with different stoichiometric and
                      thickness are epitaxially grown on DyScO3, TbScO3 and GdScO3
                      substrates. The lattice mismatch between substrate and film
                      leads to different in-plane compressive and tensile strain
                      within $-1.5\%$ to $1.5\%$ in these systems. Tensile strain
                      causes an increase of the in-plane ferroelectric dielectric
                      phase transition temperature, while compressive strain
                      decreases the transition temperature. The films show a
                      metal-insulator transition and an extremely large
                      tunability, they represent relaxor-type ferroelectrics and
                      the ferroelectric properties are highly anisotropic. The
                      data are discussed in terms of existing model for
                      relaxor-type ferroelectrics. The potential of these films
                      for sensors (e.g. surface or bulk acoustic wave devices) is
                      examined.},
      month         = {Oct},
      date          = {2015-10-12},
      organization  = {International School of Oxide
                       Electronics, Cargèse (France), 12 Oct
                       2015 - 24 Oct 2015},
      subtyp        = {After Call},
      cin          = {PGI-8 / JARA-FIT / PGI-9},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-9-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/205036},
}