Hauptseite > Publikationsdatenbank > Engineering the ferroelectric and resistivity Properties of Oxide Films via Compressive and Tensile Strain > print

001     205036
005     20210129220429.0
037 _ _ |a FZJ-2015-05540
100 1 _ |a Dai, Yang
|0 P:(DE-Juel1)161308
|b 0
|u fzj
111 2 _ |a International School of Oxide Electronics
|c Cargèse
|d 2015-10-12 - 2015-10-24
|w France
245 _ _ |a Engineering the ferroelectric and resistivity Properties of Oxide Films via Compressive and Tensile Strain
260 _ _ |c 2015
336 7 _ |a Poster
|b poster
|m poster
|0 PUB:(DE-HGF)24
|s 1441625253_16213
|2 PUB:(DE-HGF)
|x After Call
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Output Types/Conference Poster
|2 DataCite
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a CONFERENCE_POSTER
|2 ORCID
336 7 _ |a INPROCEEDINGS
|2 BibTeX
520 _ _ |a Strain can strongly modify the electronic characteristics of oxide materials. For instance the phase transition from the ferroelectric to the dielectric state can be shifted by up to 300 K in either directions. As a result, room temperature permittivity can be enhanced significantly, e.g. for SrTiO3 from εRT≈600 to εRT≈25000. Moreover the resulting ferroelectrics are highly anisotropic and show a number of properties that are extremely interesting for various applications. In this work we try to perform a systematic study of the impact of strain on the system BaxSr(1-x)TiO3. Films with different stoichiometric and thickness are epitaxially grown on DyScO3, TbScO3 and GdScO3 substrates. The lattice mismatch between substrate and film leads to different in-plane compressive and tensile strain within -1.5% to 1.5% in these systems. Tensile strain causes an increase of the in-plane ferroelectric dielectric phase transition temperature, while compressive strain decreases the transition temperature. The films show a metal-insulator transition and an extremely large tunability, they represent relaxor-type ferroelectrics and the ferroelectric properties are highly anisotropic. The data are discussed in terms of existing model for relaxor-type ferroelectrics. The potential of these films for sensors (e.g. surface or bulk acoustic wave devices) is examined.
536 _ _ |a 523 - Controlling Configuration-Based Phenomena (POF3-523)
|0 G:(DE-HGF)POF3-523
|c POF3-523
|f POF III
|x 0
700 1 _ |a Schubert, Jürgen
|0 P:(DE-Juel1)128631
|b 1
|u fzj
700 1 _ |a Hollmann, Eugen
|0 P:(DE-Juel1)128687
|b 2
|u fzj
700 1 _ |a Wördenweber, Roger
|0 P:(DE-Juel1)128749
|b 3
|u fzj
909 C O |o oai:juser.fz-juelich.de:205036
|p VDB
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)161308
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)128631
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)128687
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)128749
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-523
|2 G:(DE-HGF)POF3-500
|v Controlling Configuration-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2015
920 _ _ |l no
920 1 _ |0 I:(DE-Juel1)PGI-8-20110106
|k PGI-8
|l Bioelektronik
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 2
980 _ _ |a poster
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-8-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-9-20110106

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