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000021113 1001_ $$0P:(DE-HGF)0$$aStefanov, S.$$b0
000021113 245__ $$aLaser synthesis of germanium tin alloys on virtual germanium
000021113 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
000021113 300__ $$a104101
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000021113 440_0 $$0562$$aApplied Physics Letters$$v100$$x0003-6951$$y10
000021113 500__ $$3POF3_Assignment on 2016-02-29
000021113 500__ $$aResearch on PLIE has been partially financed by Spanish (MAT2008-02350, MAT2011-24077) and Galician (2010/83) Grants. Research at IHT was supported by the Deutsche Forschungs-gemeinschaft (SCHU2496/4-1).
000021113 520__ $$aSynthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692175]
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000021113 7001_ $$0P:(DE-HGF)0$$aConde, J.C.$$b1
000021113 7001_ $$0P:(DE-HGF)0$$aBenedetti, A.$$b2
000021113 7001_ $$0P:(DE-HGF)0$$aSerra, C.$$b3
000021113 7001_ $$0P:(DE-HGF)0$$aWerner, J.$$b4
000021113 7001_ $$0P:(DE-HGF)0$$aOehme, M.$$b5
000021113 7001_ $$0P:(DE-HGF)0$$aSchulze, J.$$b6
000021113 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b7$$uFZJ
000021113 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b8$$uFZJ
000021113 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b9$$uFZJ
000021113 7001_ $$0P:(DE-HGF)0$$aChiussi, S.$$b10
000021113 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3692175$$gVol. 100, p. 104101$$p104101$$q100<104101$$tApplied physics letters$$v100$$x0003-6951$$y2012
000021113 8567_ $$uhttp://dx.doi.org/10.1063/1.3692175
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