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Journal Article | PreJuSER-21113 |
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2012
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/7462 doi:10.1063/1.3692175
Abstract: Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692175]
Keyword(s): J
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