001     21113
005     20180208194434.0
024 7 _ |2 DOI
|a 10.1063/1.3692175
024 7 _ |2 WOS
|a WOS:000301655500088
024 7 _ |2 Handle
|a 2128/7462
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082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |0 P:(DE-HGF)0
|a Stefanov, S.
|b 0
245 _ _ |a Laser synthesis of germanium tin alloys on virtual germanium
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2012
300 _ _ |a 104101
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440 _ 0 |0 562
|a Applied Physics Letters
|v 100
|x 0003-6951
|y 10
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a Research on PLIE has been partially financed by Spanish (MAT2008-02350, MAT2011-24077) and Galician (2010/83) Grants. Research at IHT was supported by the Deutsche Forschungs-gemeinschaft (SCHU2496/4-1).
520 _ _ |a Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692175]
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|a Serra, C.
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|a Werner, J.
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|a Oehme, M.
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856 7 _ |u http://dx.doi.org/10.1063/1.3692175
856 4 _ |u https://juser.fz-juelich.de/record/21113/files/FZJ-21113.pdf
|y Published under German "Allianz" Licensing conditions on 2012-03-06. Available in OpenAccess from 2012-03-06
|z Published final document.
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