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000021947 1001_ $$0P:(DE-Juel1)158062$$aMenzel, S.$$b0$$uFZJ
000021947 245__ $$aSimulation of multilevel switching in electrochemical metallization memory cells
000021947 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
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000021947 520__ $$aWe report on a simulation model for bipolar resistive switching in cation-migration based memristive devices. The model is based on the electrochemical driven growth and dissolution of a metallic filament. The origin of multilevel switching is proposed to be direct tunneling between the growing filament and the counter electrode. An important result of our parameter simulation studies is that different materials show the same experimental multilevel behavior. Our model fully reproduces the experimental data and allows for an explanation of the transition from bipolar to nonpolar switching. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673239]
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000021947 7001_ $$0P:(DE-Juel1)VDB3024$$aBöttger, U.$$b1$$uFZJ
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