Journal Article

PreJuSER-21947

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Simulation of multilevel switching in electrochemical metallization memory cells

Menzel, S.FZJ* ; Böttger, U.FZJ* ; Waser, R.FZJ*

2012
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/7501  doi:10.1063/1.3673239

Abstract: We report on a simulation model for bipolar resistive switching in cation-migration based memristive devices. The model is based on the electrochemical driven growth and dissolution of a metallic filament. The origin of multilevel switching is proposed to be direct tunneling between the growing filament and the counter electrode. An important result of our parameter simulation studies is that different materials show the same experimental multilevel behavior. Our model fully reproduces the experimental data and allows for an explanation of the transition from bipolar to nonpolar switching. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673239]

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
; ; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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