TY  - JOUR
AU  - Menzel, S.
AU  - Böttger, U.
AU  - Waser, R.
TI  - Simulation of multilevel switching in electrochemical metallization memory cells
JO  - Journal of applied physics
VL  - 111
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-21947
SP  - 014501
PY  - 2012
N1  - Record converted from VDB: 12.11.2012
AB  - We report on a simulation model for bipolar resistive switching in cation-migration based memristive devices. The model is based on the electrochemical driven growth and dissolution of a metallic filament. The origin of multilevel switching is proposed to be direct tunneling between the growing filament and the counter electrode. An important result of our parameter simulation studies is that different materials show the same experimental multilevel behavior. Our model fully reproduces the experimental data and allows for an explanation of the transition from bipolar to nonpolar switching. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673239]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000299127200100
DO  - DOI:10.1063/1.3673239
UR  - https://juser.fz-juelich.de/record/21947
ER  -