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@ARTICLE{Menzel:21947,
author = {Menzel, S. and Böttger, U. and Waser, R.},
title = {{S}imulation of multilevel switching in electrochemical
metallization memory cells},
journal = {Journal of applied physics},
volume = {111},
issn = {0021-8979},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-21947},
pages = {014501},
year = {2012},
note = {Record converted from VDB: 12.11.2012},
abstract = {We report on a simulation model for bipolar resistive
switching in cation-migration based memristive devices. The
model is based on the electrochemical driven growth and
dissolution of a metallic filament. The origin of multilevel
switching is proposed to be direct tunneling between the
growing filament and the counter electrode. An important
result of our parameter simulation studies is that different
materials show the same experimental multilevel behavior.
Our model fully reproduces the experimental data and allows
for an explanation of the transition from bipolar to
nonpolar switching. (C) 2012 American Institute of Physics.
[doi:10.1063/1.3673239]},
keywords = {J (WoSType)},
cin = {PGI-7 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000299127200100},
doi = {10.1063/1.3673239},
url = {https://juser.fz-juelich.de/record/21947},
}