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@ARTICLE{Menzel:21947,
      author       = {Menzel, S. and Böttger, U. and Waser, R.},
      title        = {{S}imulation of multilevel switching in electrochemical
                      metallization memory cells},
      journal      = {Journal of applied physics},
      volume       = {111},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-21947},
      pages        = {014501},
      year         = {2012},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We report on a simulation model for bipolar resistive
                      switching in cation-migration based memristive devices. The
                      model is based on the electrochemical driven growth and
                      dissolution of a metallic filament. The origin of multilevel
                      switching is proposed to be direct tunneling between the
                      growing filament and the counter electrode. An important
                      result of our parameter simulation studies is that different
                      materials show the same experimental multilevel behavior.
                      Our model fully reproduces the experimental data and allows
                      for an explanation of the transition from bipolar to
                      nonpolar switching. (C) 2012 American Institute of Physics.
                      [doi:10.1063/1.3673239]},
      keywords     = {J (WoSType)},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000299127200100},
      doi          = {10.1063/1.3673239},
      url          = {https://juser.fz-juelich.de/record/21947},
}