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001     21947
005     20180210131330.0
024 7 _ |a 10.1063/1.3673239
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041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Menzel, S.
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245 _ _ |a Simulation of multilevel switching in electrochemical metallization memory cells
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2012
300 _ _ |a 014501
336 7 _ |a Journal Article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
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500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We report on a simulation model for bipolar resistive switching in cation-migration based memristive devices. The model is based on the electrochemical driven growth and dissolution of a metallic filament. The origin of multilevel switching is proposed to be direct tunneling between the growing filament and the counter electrode. An important result of our parameter simulation studies is that different materials show the same experimental multilevel behavior. Our model fully reproduces the experimental data and allows for an explanation of the transition from bipolar to nonpolar switching. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673239]
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700 1 _ |a Böttger, U.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.3673239
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856 7 _ |u http://dx.doi.org/10.1063/1.3673239
856 4 _ |u https://juser.fz-juelich.de/record/21947/files/FZJ-21947.pdf
|y Published under German "Allianz" Licensing conditions on 2012-01-03. Available in OpenAccess from 2012-01-03
|z Published final document.
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