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@ARTICLE{Mikulics:22689,
author = {Mikulics, M. and Hardtdegen, H. and Gregusová, D. and
Sofer, Z. and Simek, P. and Trellenkamp, St. and
Grützmacher, D. and Lüth, H. and Kordos, P. and Marso, M.},
title = {{N}on-uniform distribution of induced strain in a gate
recessed {A}l{G}a{N}/{G}a{N} structure evaluated by
micro-{PL} measurements},
journal = {Semiconductor science and technology},
volume = {27},
issn = {0268-1242},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {PreJuSER-22689},
pages = {105008},
year = {2012},
note = {This work was supported by Ministry of Education of the
Czech Republic (research project no. MSM6046137302).
Financial support from specific university research (MSMT
no. 21/2012) is also acknowledged.},
abstract = {Micro-photoluminescence (mu-PL) studies were performed on
AlGaN/GaN heterostructure field effect transistors (HFETs)
with different gate-recessing depths. It was found that
mu-PL is the method of choice for detecting dry etching
damage and simultaneously recording strain and stress in the
HFET GaN layer. Lateral sub-mu m resolved mapping shows that
the strain in the GaN layer after recessing is partially
relaxed and non-uniform.},
keywords = {J (WoSType)},
cin = {JARA-FIT / PGI-9},
ddc = {530},
cid = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Engineering, Electrical $\&$ Electronic / Materials
Science, Multidisciplinary / Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000309111800010},
doi = {10.1088/0268-1242/27/10/105008},
url = {https://juser.fz-juelich.de/record/22689},
}