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000022690 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000022690 084__ $$2WoS$$aPhysics, Applied
000022690 1001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b0$$uFZJ
000022690 245__ $$aElectrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
000022690 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2012
000022690 300__ $$a754 - 756
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000022690 500__ $$aThe work reported here was supported by the Slovak Scientific Grant Agency VEGA (Contract Nos. 1/0866/11 and 2/0098/09) and the Centre of Excellence CENAMOST (VVCE-0049-07).
000022690 520__ $$aPerformance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gate was investigated and compared with non-recessed counterparts. Optimal dry etch conditions by plasma assisted Ar sputtering were found for similar to 6 nm gate recess of a 20 nm thick AlGaN barrier layer. A decrease of the residual strain after the gate recessing (from -0.9 GPa to -0.68 GPa) was evaluated from the photoluminescence measurement. The saturation drain current at the gate voltage V-G = 1 V decreased from 1.05 A/mm to 0.85 A/mm after the recessing. The gate voltage for a maximal transconductance (240-250 mS/mm) has shifted from -3 V for non-recessed HFETs to -0.2 V for recessed counterparts. Similarly, the threshold voltage increased after the gate recessing. A decrease of the sheet charge density from 1 x 10(13) cm(-2) to 4 x 10(12) cm(-2) at V-G = 0 V has been evaluated from the capacitance measurements. The RF measurements yielded a slight increase of the cut-off frequencies after the gate recessing. All these indicate that the gate recessing is a useful tool to optimize the AlGaN/GaN HFET performance for high-frequency applications as well as for the preparation of normally-off devices. (C) 2011 Elsevier Ltd. All rights reserved.
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000022690 65320 $$2Author$$aGallium nitride
000022690 65320 $$2Author$$aPlasma assisted etching
000022690 65320 $$2Author$$aElectrical properties
000022690 65320 $$2Author$$aPhotoluminescence
000022690 65320 $$2Author$$aTransistor
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000022690 7001_ $$0P:(DE-Juel1)VDB61237$$aFox, A.$$b1$$uFZJ
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