guest ::
| Home > Publications database > Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate |
| Home > Publications database > Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate |
| Journal Article | PreJuSER-22690 |
; ; ; ; ;
2012
Elsevier Science
Amsterdam [u.a.]
This record in other databases: 
Please use a persistent id in citations: doi:10.1016/j.vacuum.2011.07.016
Abstract: Performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gate was investigated and compared with non-recessed counterparts. Optimal dry etch conditions by plasma assisted Ar sputtering were found for similar to 6 nm gate recess of a 20 nm thick AlGaN barrier layer. A decrease of the residual strain after the gate recessing (from -0.9 GPa to -0.68 GPa) was evaluated from the photoluminescence measurement. The saturation drain current at the gate voltage V-G = 1 V decreased from 1.05 A/mm to 0.85 A/mm after the recessing. The gate voltage for a maximal transconductance (240-250 mS/mm) has shifted from -3 V for non-recessed HFETs to -0.2 V for recessed counterparts. Similarly, the threshold voltage increased after the gate recessing. A decrease of the sheet charge density from 1 x 10(13) cm(-2) to 4 x 10(12) cm(-2) at V-G = 0 V has been evaluated from the capacitance measurements. The RF measurements yielded a slight increase of the cut-off frequencies after the gate recessing. All these indicate that the gate recessing is a useful tool to optimize the AlGaN/GaN HFET performance for high-frequency applications as well as for the preparation of normally-off devices. (C) 2011 Elsevier Ltd. All rights reserved.
Keyword(s): J ; Gallium nitride (auto) ; Plasma assisted etching (auto) ; Electrical properties (auto) ; Photoluminescence (auto) ; Transistor (auto)
; BIOSIS Previews ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; Nationallizenz
; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
|
The record appears in these collections: |