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@ARTICLE{Mikulics:22690,
      author       = {Mikulics, M. and Fox, A. and Marso, M. and Grützmacher, D.
                      and Donoval, D. and Kordos, P.},
      title        = {{E}lectrical and structural characterization of
                      {A}l{G}a{N}/{G}a{N} field-effect transistors with recessed
                      gate},
      journal      = {Vacuum},
      volume       = {86},
      number       = {6},
      issn         = {0042-207X},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-22690},
      pages        = {754 - 756},
      year         = {2012},
      note         = {The work reported here was supported by the Slovak
                      Scientific Grant Agency VEGA (Contract Nos. 1/0866/11 and
                      2/0098/09) and the Centre of Excellence CENAMOST
                      (VVCE-0049-07).},
      abstract     = {Performance of AlGaN/GaN heterostructure field-effect
                      transistors (HFETs) with recessed gate was investigated and
                      compared with non-recessed counterparts. Optimal dry etch
                      conditions by plasma assisted Ar sputtering were found for
                      similar to 6 nm gate recess of a 20 nm thick AlGaN barrier
                      layer. A decrease of the residual strain after the gate
                      recessing (from -0.9 GPa to -0.68 GPa) was evaluated from
                      the photoluminescence measurement. The saturation drain
                      current at the gate voltage V-G = 1 V decreased from 1.05
                      A/mm to 0.85 A/mm after the recessing. The gate voltage for
                      a maximal transconductance (240-250 mS/mm) has shifted from
                      -3 V for non-recessed HFETs to -0.2 V for recessed
                      counterparts. Similarly, the threshold voltage increased
                      after the gate recessing. A decrease of the sheet charge
                      density from 1 x 10(13) cm(-2) to 4 x 10(12) cm(-2) at V-G =
                      0 V has been evaluated from the capacitance measurements.
                      The RF measurements yielded a slight increase of the cut-off
                      frequencies after the gate recessing. All these indicate
                      that the gate recessing is a useful tool to optimize the
                      AlGaN/GaN HFET performance for high-frequency applications
                      as well as for the preparation of normally-off devices. (C)
                      2011 Elsevier Ltd. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000301018400042},
      doi          = {10.1016/j.vacuum.2011.07.016},
      url          = {https://juser.fz-juelich.de/record/22690},
}