guest ::
| Home > Publications database > Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate > print |
| Home > Publications database > Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate > print |
| 001 | 22690 | ||
| 005 | 20200604161318.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.vacuum.2011.07.016 |
| 024 | 7 | _ | |2 WOS |a WOS:000301018400042 |
| 037 | _ | _ | |a PreJuSER-22690 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-Juel1)128613 |a Mikulics, M. |b 0 |u FZJ |
| 245 | _ | _ | |a Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier Science |c 2012 |
| 300 | _ | _ | |a 754 - 756 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |
| 336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
| 336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
| 336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
| 336 | 7 | _ | |2 DRIVER |a article |
| 440 | _ | 0 | |0 5896 |a Vacuum |v 86 |x 0042-207X |y 6 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a The work reported here was supported by the Slovak Scientific Grant Agency VEGA (Contract Nos. 1/0866/11 and 2/0098/09) and the Centre of Excellence CENAMOST (VVCE-0049-07). |
| 520 | _ | _ | |a Performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gate was investigated and compared with non-recessed counterparts. Optimal dry etch conditions by plasma assisted Ar sputtering were found for similar to 6 nm gate recess of a 20 nm thick AlGaN barrier layer. A decrease of the residual strain after the gate recessing (from -0.9 GPa to -0.68 GPa) was evaluated from the photoluminescence measurement. The saturation drain current at the gate voltage V-G = 1 V decreased from 1.05 A/mm to 0.85 A/mm after the recessing. The gate voltage for a maximal transconductance (240-250 mS/mm) has shifted from -3 V for non-recessed HFETs to -0.2 V for recessed counterparts. Similarly, the threshold voltage increased after the gate recessing. A decrease of the sheet charge density from 1 x 10(13) cm(-2) to 4 x 10(12) cm(-2) at V-G = 0 V has been evaluated from the capacitance measurements. The RF measurements yielded a slight increase of the cut-off frequencies after the gate recessing. All these indicate that the gate recessing is a useful tool to optimize the AlGaN/GaN HFET performance for high-frequency applications as well as for the preparation of normally-off devices. (C) 2011 Elsevier Ltd. All rights reserved. |
| 536 | _ | _ | |0 G:(DE-Juel1)FUEK412 |2 G:(DE-HGF) |a Grundlagen für zukünftige Informationstechnologien |c P42 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |2 WoSType |a J |
| 653 | 2 | 0 | |2 Author |a Gallium nitride |
| 653 | 2 | 0 | |2 Author |a Plasma assisted etching |
| 653 | 2 | 0 | |2 Author |a Electrical properties |
| 653 | 2 | 0 | |2 Author |a Photoluminescence |
| 653 | 2 | 0 | |2 Author |a Transistor |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB61237 |a Fox, A. |b 1 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Marso, M. |b 2 |
| 700 | 1 | _ | |0 P:(DE-Juel1)125588 |a Grützmacher, D. |b 3 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Donoval, D. |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Kordos, P. |b 5 |
| 773 | _ | _ | |0 PERI:(DE-600)1479044-0 |a 10.1016/j.vacuum.2011.07.016 |g Vol. 86, p. 754 - 756 |n 6 |p 754 - 756 |q 86<754 - 756 |t Vacuum |v 86 |x 0042-207X |y 2012 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.vacuum.2011.07.016 |
| 909 | C | O | |o oai:juser.fz-juelich.de:22690 |p VDB |
| 913 | 1 | _ | |0 G:(DE-Juel1)FUEK412 |1 G:(DE-HGF)POF2-420 |2 G:(DE-HGF)POF2-400 |a DE-HGF |b Schlüsseltechnologien |k P42 |l Grundlagen für zukünftige Informationstechnologien (FIT) |v Grundlagen für zukünftige Informationstechnologien |x 0 |
| 913 | 2 | _ | |0 G:(DE-HGF)POF3-529H |1 G:(DE-HGF)POF3-520 |2 G:(DE-HGF)POF3-500 |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |v Addenda |x 0 |
| 914 | 1 | _ | |y 2012 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |2 StatID |a JCR/ISI refereed |
| 915 | _ | _ | |0 StatID:(DE-HGF)0100 |2 StatID |a JCR |
| 915 | _ | _ | |0 StatID:(DE-HGF)0110 |2 StatID |a WoS |b Science Citation Index |
| 915 | _ | _ | |0 StatID:(DE-HGF)0111 |2 StatID |a WoS |b Science Citation Index Expanded |
| 915 | _ | _ | |0 StatID:(DE-HGF)0150 |2 StatID |a DBCoverage |b Web of Science Core Collection |
| 915 | _ | _ | |0 StatID:(DE-HGF)0199 |2 StatID |a DBCoverage |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |0 StatID:(DE-HGF)0200 |2 StatID |a DBCoverage |b SCOPUS |
| 915 | _ | _ | |0 StatID:(DE-HGF)0300 |2 StatID |a DBCoverage |b Medline |
| 915 | _ | _ | |0 StatID:(DE-HGF)0420 |2 StatID |a Nationallizenz |
| 915 | _ | _ | |0 StatID:(DE-HGF)1050 |2 StatID |a DBCoverage |b BIOSIS Previews |
| 915 | _ | _ | |0 StatID:(DE-HGF)1150 |2 StatID |a DBCoverage |b Current Contents - Physical, Chemical and Earth Sciences |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |g JARA |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |g PGI |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)139397 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|