Journal Article

PreJuSER-22691

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

Mikulics, M.FZJ* ; Hardtdegen, H.FZJ* ; Winden, A.FZJ* ; Fox, A.FZJ* ; Marso, M. ; Sofer, Z. ; Lüth, H.FZJ* ; Grützmacher, D.FZJ* ; Kordos, P.

2012
Wiley-VCH Berlin

This record in other databases:  

Please use a persistent id in citations: doi:10.1002/pssc.201100408

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
SCOPUS

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