%0 Journal Article
%A Yang, S.
%A Huang, S.
%A Chen, H.
%A Zhou, C.
%A Zhou, Q.
%A Schnee, M.
%A Zhao, Q.T.
%A Schubert, J.
%A Chen, K.J.
%T AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric
%J IEEE Electron Device Letters
%V 33
%@ 0741-3106
%C New York, NY
%I IEEE
%M PreJuSER-22711
%P 979 - 981
%D 2012
%Z This work was supported in part by the Hong Kong Research Grants Council under Grants 611610 and 611311. The review of this letter was arranged by Editor J.A. del Alamo.
%X A high-kappa LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high I-ON/I-OFF of 10(9), a maximum drain current of 820 mA/mm at V-GS = 3 V, a peak transconductance (G(m)) of similar to 192 mS/mm, and a steep subthreshold slope (SS) of similar to 73 mV/dec.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000305835300021
%R 10.1109/LED.2012.2195291
%U https://juser.fz-juelich.de/record/22711