Journal Article

PreJuSER-22711

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric

Yang, S. ; Huang, S. ; Chen, H. ; Zhou, C. ; Zhou, Q. ; Schnee, M.FZJ* ; Zhao, Q. T.FZJ* ; Schubert, J.FZJ* ; Chen, K. J.FZJ*

2012
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2012.2195291

Abstract: A high-kappa LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high I-ON/I-OFF of 10(9), a maximum drain current of 820 mA/mm at V-GS = 3 V, a peak transconductance (G(m)) of similar to 192 mS/mm, and a steep subthreshold slope (SS) of similar to 73 mV/dec.

Keyword(s): J ; AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs) (MISHEMTs) (auto) ; high-kappa (auto) ; LaLuO3 (LLO) (auto)

Note: This work was supported in part by the Hong Kong Research Grants Council under Grants 611610 and 611311. The review of this letter was arranged by Editor J.A. del Alamo.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
Current Contents - Life Sciences ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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