000022711 001__ 22711
000022711 005__ 20180210122322.0
000022711 0247_ $$2DOI$$a10.1109/LED.2012.2195291
000022711 0247_ $$2WOS$$aWOS:000305835300021
000022711 0247_ $$2ISSN$$a0741-3106
000022711 037__ $$aPreJuSER-22711
000022711 041__ $$aeng
000022711 082__ $$a620
000022711 084__ $$2WoS$$aEngineering, Electrical & Electronic
000022711 1001_ $$0P:(DE-HGF)0$$aYang, S.$$b0
000022711 245__ $$aAlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric
000022711 260__ $$aNew York, NY$$bIEEE$$c2012
000022711 300__ $$a979 - 981
000022711 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000022711 3367_ $$2DataCite$$aOutput Types/Journal article
000022711 3367_ $$00$$2EndNote$$aJournal Article
000022711 3367_ $$2BibTeX$$aARTICLE
000022711 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000022711 3367_ $$2DRIVER$$aarticle
000022711 440_0 $$02464$$aIEEE Electron Device Letters$$v33$$x0741-3106$$y7
000022711 500__ $$3POF3_Assignment on 2016-02-29
000022711 500__ $$aThis work was supported in part by the Hong Kong Research Grants Council under Grants 611610 and 611311. The review of this letter was arranged by Editor J.A. del Alamo.
000022711 520__ $$aA high-kappa LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high I-ON/I-OFF of 10(9), a maximum drain current of 820 mA/mm at V-GS = 3 V, a peak transconductance (G(m)) of similar to 192 mS/mm, and a steep subthreshold slope (SS) of similar to 73 mV/dec.
000022711 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000022711 588__ $$aDataset connected to Web of Science
000022711 65320 $$2Author$$aAlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs) (MISHEMTs)
000022711 65320 $$2Author$$ahigh-kappa
000022711 65320 $$2Author$$aLaLuO3 (LLO)
000022711 650_7 $$2WoSType$$aJ
000022711 7001_ $$0P:(DE-HGF)0$$aHuang, S.$$b1
000022711 7001_ $$0P:(DE-HGF)0$$aChen, H.$$b2
000022711 7001_ $$0P:(DE-HGF)0$$aZhou, C.$$b3
000022711 7001_ $$0P:(DE-HGF)0$$aZhou, Q.$$b4
000022711 7001_ $$0P:(DE-Juel1)VDB93168$$aSchnee, M.$$b5$$uFZJ
000022711 7001_ $$0P:(DE-Juel1)VDB97138$$aZhao, Q.T.$$b6$$uFZJ
000022711 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b7$$uFZJ
000022711 7001_ $$0P:(DE-Juel1)VDB101682$$aChen, K.J.$$b8$$uFZJ
000022711 773__ $$0PERI:(DE-600)2034325-5$$a10.1109/LED.2012.2195291$$gVol. 33, p. 979 - 981$$p979 - 981$$q33<979 - 981$$tIEEE Electron Device Letters$$v33$$x0741-3106$$y2012
000022711 8567_ $$uhttp://dx.doi.org/10.1109/LED.2012.2195291
000022711 909CO $$ooai:juser.fz-juelich.de:22711$$pVDB
000022711 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000022711 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000022711 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000022711 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000022711 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000022711 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000022711 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000022711 915__ $$0StatID:(DE-HGF)1030$$2StatID$$aDBCoverage$$bCurrent Contents - Life Sciences
000022711 9141_ $$y2012
000022711 9131_ $$0G:(DE-Juel1)FUEK412$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000022711 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000022711 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000022711 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000022711 970__ $$aVDB:(DE-Juel1)139436
000022711 980__ $$aVDB
000022711 980__ $$aConvertedRecord
000022711 980__ $$ajournal
000022711 980__ $$aI:(DE-82)080009_20140620
000022711 980__ $$aI:(DE-Juel1)PGI-9-20110106
000022711 980__ $$aUNRESTRICTED
000022711 981__ $$aI:(DE-Juel1)PGI-9-20110106
000022711 981__ $$aI:(DE-Juel1)VDB881