TY  - JOUR
AU  - Yang, S.
AU  - Huang, S.
AU  - Chen, H.
AU  - Zhou, C.
AU  - Zhou, Q.
AU  - Schnee, M.
AU  - Zhao, Q.T.
AU  - Schubert, J.
AU  - Chen, K.J.
TI  - AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric
JO  - IEEE Electron Device Letters
VL  - 33
SN  - 0741-3106
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-22711
SP  - 979 - 981
PY  - 2012
N1  - This work was supported in part by the Hong Kong Research Grants Council under Grants 611610 and 611311. The review of this letter was arranged by Editor J.A. del Alamo.
AB  - A high-kappa LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high I-ON/I-OFF of 10(9), a maximum drain current of 820 mA/mm at V-GS = 3 V, a peak transconductance (G(m)) of similar to 192 mS/mm, and a steep subthreshold slope (SS) of similar to 73 mV/dec.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000305835300021
DO  - DOI:10.1109/LED.2012.2195291
UR  - https://juser.fz-juelich.de/record/22711
ER  -