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| 001 | 22711 | ||
| 005 | 20180210122322.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1109/LED.2012.2195291 |
| 024 | 7 | _ | |2 WOS |a WOS:000305835300021 |
| 024 | 7 | _ | |2 ISSN |a 0741-3106 |
| 037 | _ | _ | |a PreJuSER-22711 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Yang, S. |b 0 |
| 245 | _ | _ | |a AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric |
| 260 | _ | _ | |a New York, NY |b IEEE |c 2012 |
| 300 | _ | _ | |a 979 - 981 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |0 2464 |a IEEE Electron Device Letters |v 33 |x 0741-3106 |y 7 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a This work was supported in part by the Hong Kong Research Grants Council under Grants 611610 and 611311. The review of this letter was arranged by Editor J.A. del Alamo. |
| 520 | _ | _ | |a A high-kappa LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high I-ON/I-OFF of 10(9), a maximum drain current of 820 mA/mm at V-GS = 3 V, a peak transconductance (G(m)) of similar to 192 mS/mm, and a steep subthreshold slope (SS) of similar to 73 mV/dec. |
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| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |2 WoSType |a J |
| 653 | 2 | 0 | |2 Author |a AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs) (MISHEMTs) |
| 653 | 2 | 0 | |2 Author |a high-kappa |
| 653 | 2 | 0 | |2 Author |a LaLuO3 (LLO) |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Huang, S. |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Chen, H. |b 2 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Zhou, C. |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Zhou, Q. |b 4 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB93168 |a Schnee, M. |b 5 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB97138 |a Zhao, Q.T. |b 6 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)128631 |a Schubert, J. |b 7 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB101682 |a Chen, K.J. |b 8 |u FZJ |
| 773 | _ | _ | |0 PERI:(DE-600)2034325-5 |a 10.1109/LED.2012.2195291 |g Vol. 33, p. 979 - 981 |p 979 - 981 |q 33<979 - 981 |t IEEE Electron Device Letters |v 33 |x 0741-3106 |y 2012 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1109/LED.2012.2195291 |
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