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@ARTICLE{Li:23111,
      author       = {Li, H. and Xiao, Y. and Schmitz, B. and Perßon, J. and
                      Schmidt, W. and Meuffels, P. and Roth, G. and Brückel, T.},
      title        = {{P}ossible magnetic-polaron-switched positive and negative
                      magnetoresistance in the {G}d{S}i single crystals},
      journal      = {Scientific Reports},
      volume       = {2},
      number       = {Art. No.750},
      issn         = {2045-2322},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {PreJuSER-23111},
      year         = {2012},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Magnetoresistance (MR) has attracted tremendous attention
                      for possible technological applications. Understanding the
                      role of magnetism in manipulating MR may in turn steer the
                      searching for new applicable MR materials. Here we show that
                      antiferromagnetic (AFM) GdSi metal displays an anisotropic
                      positive MR value (PMRV), up to $~415\%,$ accompanied by a
                      large negative thermal volume expansion (NTVE). Around T(N)
                      the PMRV translates to negative, down to $~-10.5\%.$ Their
                      theory-breaking magnetic-field dependencies [PMRV:
                      dominantly linear; negative MR value (NMRV): quadratic] and
                      the unusual NTVE indicate that PMRV is induced by the
                      formation of magnetic polarons in 5d bands, whereas NMRV is
                      possibly due to abated electron-spin scattering resulting
                      from magnetic-field-aligned local 4f spins. Our results may
                      open up a new avenue of searching for giant MR materials by
                      suppressing the AFM transition temperature, opposite the
                      case in manganites, and provide a promising approach to
                      novel magnetic and electric devices.},
      cin          = {PGI-4 / JCNS-2 / JARA-FIT / PGI-7},
      ddc          = {000},
      cid          = {I:(DE-Juel1)PGI-4-20110106 / I:(DE-Juel1)JCNS-2-20110106 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien
                      (FUEK412) / 544 - In-house Research with PNI (POF2-544)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(DE-HGF)POF2-544},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:23087815},
      pmc          = {pmc:PMC3475993},
      UT           = {WOS:000310448900004},
      doi          = {10.1038/srep00750},
      url          = {https://juser.fz-juelich.de/record/23111},
}