Journal Article

PreJuSER-23111

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystals

Li, H.FZJ* ; Xiao, Y.FZJ* ; Schmitz, B.FZJ* ; Perßon, J.FZJ* ; Schmidt, W.FZJ* ; Meuffels, P.FZJ* ; Roth, G. ; Brückel, T.FZJ*

2012
Nature Publishing Group London

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Please use a persistent id in citations: http://hdl.handle.net/2128/7612  doi:10.1038/srep00750

Abstract: Magnetoresistance (MR) has attracted tremendous attention for possible technological applications. Understanding the role of magnetism in manipulating MR may in turn steer the searching for new applicable MR materials. Here we show that antiferromagnetic (AFM) GdSi metal displays an anisotropic positive MR value (PMRV), up to ~415%, accompanied by a large negative thermal volume expansion (NTVE). Around T(N) the PMRV translates to negative, down to ~-10.5%. Their theory-breaking magnetic-field dependencies [PMRV: dominantly linear; negative MR value (NMRV): quadratic] and the unusual NTVE indicate that PMRV is induced by the formation of magnetic polarons in 5d bands, whereas NMRV is possibly due to abated electron-spin scattering resulting from magnetic-field-aligned local 4f spins. Our results may open up a new avenue of searching for giant MR materials by suppressing the AFM transition temperature, opposite the case in manganites, and provide a promising approach to novel magnetic and electric devices.

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Streumethoden (PGI-4)
2. Streumethoden (JCNS-2)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
4. Elektronische Materialien (PGI-7)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (FUEK412) (FUEK412)
2. 544 - In-house Research with PNI (POF2-544) (POF2-544)

Appears in the scientific report 2012
Notes: Sci. Rep. 2, 750; DOI: 10.1038/srep00750 (2012) noch nicht erschienen

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