000023224 001__ 23224
000023224 005__ 20180210123905.0
000023224 0247_ $$2pmid$$apmid:21317500
000023224 0247_ $$2DOI$$a10.1088/0957-4484/22/12/125704
000023224 0247_ $$2WOS$$aWOS:000287448200017
000023224 037__ $$aPreJuSER-23224
000023224 041__ $$aeng
000023224 082__ $$a530
000023224 084__ $$2WoS$$aNanoscience & Nanotechnology
000023224 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000023224 084__ $$2WoS$$aPhysics, Applied
000023224 1001_ $$0P:(DE-Juel1)VDB89091$$aGotschke, T.$$b0$$uFZJ
000023224 245__ $$aProperties of uniform diameter InN nanowires obtained under Si doping
000023224 260__ $$aBristol$$bIOP Publ.$$c2011
000023224 300__ $$a125704
000023224 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000023224 3367_ $$2DataCite$$aOutput Types/Journal article
000023224 3367_ $$00$$2EndNote$$aJournal Article
000023224 3367_ $$2BibTeX$$aARTICLE
000023224 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000023224 3367_ $$2DRIVER$$aarticle
000023224 440_0 $$04475$$aNanotechnology$$v22$$x0957-4484$$y12
000023224 500__ $$3POF3_Assignment on 2016-02-29
000023224 500__ $$aThe authors gratefully acknowledge fruitful discussions and suggestions by Professor D Grutzmacher. The authors wish to thank also K H Deussen for technical support. This work was financially supported by the German Ministry of Education and Research project 'EHQUAM'. Research carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the US Department of Energy, Office of Basic Sciences, under Contract no. DE-AC02-98CH10886.
000023224 520__ $$aHigh quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films.
000023224 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000023224 588__ $$aDataset connected to Web of Science, Pubmed
000023224 650_7 $$2WoSType$$aJ
000023224 7001_ $$0P:(DE-Juel1)VDB89096$$aSchäfer-Nolte, E.O.$$b1$$uFZJ
000023224 7001_ $$0P:(DE-Juel1)VDB89092$$aCaterino, R.$$b2$$uFZJ
000023224 7001_ $$0P:(DE-Juel1)VDB89090$$aLimbach, F.$$b3$$uFZJ
000023224 7001_ $$0P:(DE-Juel1)VDB5575$$aStoica, T.$$b4$$uFZJ
000023224 7001_ $$0P:(DE-HGF)0$$aSutter, E.$$b5
000023224 7001_ $$0P:(DE-HGF)0$$aJeganathan, K.$$b6
000023224 7001_ $$0P:(DE-Juel1)VDB12919$$aCalarco, R.$$b7$$uFZJ
000023224 773__ $$0PERI:(DE-600)1362365-5$$a10.1088/0957-4484/22/12/125704$$gVol. 22, p. 125704$$p125704$$q22<125704$$tNanotechnology$$v22$$x0957-4484$$y2011
000023224 8567_ $$uhttp://dx.doi.org/10.1088/0957-4484/22/12/125704
000023224 909CO $$ooai:juser.fz-juelich.de:23224$$pVDB
000023224 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000023224 9141_ $$y2011
000023224 9131_ $$0G:(DE-Juel1)FUEK412$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000023224 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000023224 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000023224 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000023224 970__ $$aVDB:(DE-Juel1)140217
000023224 980__ $$aVDB
000023224 980__ $$aConvertedRecord
000023224 980__ $$ajournal
000023224 980__ $$aI:(DE-82)080009_20140620
000023224 980__ $$aI:(DE-Juel1)PGI-9-20110106
000023224 980__ $$aUNRESTRICTED
000023224 981__ $$aI:(DE-Juel1)PGI-9-20110106
000023224 981__ $$aI:(DE-Juel1)VDB881