Journal Article

PreJuSER-23224

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Properties of uniform diameter InN nanowires obtained under Si doping

Gotschke, T.FZJ* ; Schäfer-Nolte, E. O.FZJ* ; Caterino, R.FZJ* ; Limbach, F.FZJ* ; Stoica, T.FZJ* ; Sutter, E. ; Jeganathan, K. ; Calarco, R.FZJ*

2011
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0957-4484/22/12/125704

Abstract: High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films.

Keyword(s): J

Note: The authors gratefully acknowledge fruitful discussions and suggestions by Professor D Grutzmacher. The authors wish to thank also K H Deussen for technical support. This work was financially supported by the German Ministry of Education and Research project 'EHQUAM'. Research carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the US Department of Energy, Office of Basic Sciences, under Contract no. DE-AC02-98CH10886.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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