TY  - JOUR
AU  - Gotschke, T.
AU  - Schäfer-Nolte, E.O.
AU  - Caterino, R.
AU  - Limbach, F.
AU  - Stoica, T.
AU  - Sutter, E.
AU  - Jeganathan, K.
AU  - Calarco, R.
TI  - Properties of uniform diameter InN nanowires obtained under Si doping
JO  - Nanotechnology
VL  - 22
SN  - 0957-4484
CY  - Bristol
PB  - IOP Publ.
M1  - PreJuSER-23224
SP  - 125704
PY  - 2011
N1  - The authors gratefully acknowledge fruitful discussions and suggestions by Professor D Grutzmacher. The authors wish to thank also K H Deussen for technical support. This work was financially supported by the German Ministry of Education and Research project 'EHQUAM'. Research carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the US Department of Energy, Office of Basic Sciences, under Contract no. DE-AC02-98CH10886.
AB  - High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:21317500
UR  - <Go to ISI:>//WOS:000287448200017
DO  - DOI:10.1088/0957-4484/22/12/125704
UR  - https://juser.fz-juelich.de/record/23224
ER  -