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@ARTICLE{Gotschke:23224,
      author       = {Gotschke, T. and Schäfer-Nolte, E.O. and Caterino, R. and
                      Limbach, F. and Stoica, T. and Sutter, E. and Jeganathan, K.
                      and Calarco, R.},
      title        = {{P}roperties of uniform diameter {I}n{N} nanowires obtained
                      under {S}i doping},
      journal      = {Nanotechnology},
      volume       = {22},
      issn         = {0957-4484},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {PreJuSER-23224},
      pages        = {125704},
      year         = {2011},
      note         = {The authors gratefully acknowledge fruitful discussions and
                      suggestions by Professor D Grutzmacher. The authors wish to
                      thank also K H Deussen for technical support. This work was
                      financially supported by the German Ministry of Education
                      and Research project 'EHQUAM'. Research carried out in part
                      at the Center for Functional Nanomaterials, Brookhaven
                      National Laboratory, which is supported by the US Department
                      of Energy, Office of Basic Sciences, under Contract no.
                      DE-AC02-98CH10886.},
      abstract     = {High quality, well-separated, homogeneous sizes and high
                      aspect ratio Si-doped InN nanowires (NWs) were grown by
                      catalyst-free molecular beam epitaxy (MBE) after
                      optimization of the growth conditions. To this end,
                      statistical analysis of NW density and size distribution was
                      performed. The high crystal quality and smooth NW surfaces
                      were observed by high resolution transmission electron
                      microscopy. Spectral photoluminescence has shown the
                      increase of the band filling effect with Si flux, indicating
                      successful n-type doping. A Raman LO scattering mode appears
                      with a pronounced low energy tail, also reported for highly
                      doped InN films.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Nanoscience $\&$ Nanotechnology / Materials Science,
                      Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:21317500},
      UT           = {WOS:000287448200017},
      doi          = {10.1088/0957-4484/22/12/125704},
      url          = {https://juser.fz-juelich.de/record/23224},
}