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001     23224
005     20180210123905.0
024 7 _ |2 pmid
|a pmid:21317500
024 7 _ |2 DOI
|a 10.1088/0957-4484/22/12/125704
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037 _ _ |a PreJuSER-23224
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Nanoscience & Nanotechnology
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |0 P:(DE-Juel1)VDB89091
|a Gotschke, T.
|b 0
|u FZJ
245 _ _ |a Properties of uniform diameter InN nanowires obtained under Si doping
260 _ _ |a Bristol
|b IOP Publ.
|c 2011
300 _ _ |a 125704
336 7 _ |a Journal Article
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |0 4475
|a Nanotechnology
|v 22
|x 0957-4484
|y 12
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a The authors gratefully acknowledge fruitful discussions and suggestions by Professor D Grutzmacher. The authors wish to thank also K H Deussen for technical support. This work was financially supported by the German Ministry of Education and Research project 'EHQUAM'. Research carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the US Department of Energy, Office of Basic Sciences, under Contract no. DE-AC02-98CH10886.
520 _ _ |a High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films.
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700 1 _ |0 P:(DE-Juel1)VDB89096
|a Schäfer-Nolte, E.O.
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700 1 _ |0 P:(DE-Juel1)VDB89092
|a Caterino, R.
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700 1 _ |0 P:(DE-Juel1)VDB89090
|a Limbach, F.
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700 1 _ |0 P:(DE-Juel1)VDB5575
|a Stoica, T.
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700 1 _ |0 P:(DE-HGF)0
|a Sutter, E.
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700 1 _ |0 P:(DE-HGF)0
|a Jeganathan, K.
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700 1 _ |0 P:(DE-Juel1)VDB12919
|a Calarco, R.
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773 _ _ |0 PERI:(DE-600)1362365-5
|a 10.1088/0957-4484/22/12/125704
|g Vol. 22, p. 125704
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|t Nanotechnology
|v 22
|x 0957-4484
|y 2011
856 7 _ |u http://dx.doi.org/10.1088/0957-4484/22/12/125704
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