%0 Journal Article
%A Schuller, B.
%A Carius, R.
%A Lenk, S.
%A Mantl, S.
%T Luminescence lifetime of the 1.5-µm emission of ß-FeSi2 precipitate layers in silicon
%J Microelectronic engineering
%V 60
%@ 0167-9317
%C [S.l.] @
%I Elsevier
%M PreJuSER-23938
%P 205 - 210
%D 2002
%Z Record converted from VDB: 12.11.2012
%X Semiconducting iron disilicide precipitates in silicon were fabricated by ion beam synthesis and characterised by photoluminescence and TEM. We have measured the decay time of the 1.55-mum line, which was found to be 10 mus at 10 K. No evidence for a fast, direct transition could be found from the time resolved photoluminescence measurements, Furthermore, we have measured the electroluminescence decay time of a demonstrator FeSi2-Si light emitting device. This shows a fast time response of below 30 ns. (C) 2002 Elsevier Science B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000173194900024
%R 10.1016/S0167-9317(01)00596-2
%U https://juser.fz-juelich.de/record/23938