Journal Article

PreJuSER-23938

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Luminescence lifetime of the 1.5-µm emission of ß-FeSi2 precipitate layers in silicon

Schuller, B.FZJ* ; Carius, R.FZJ* ; Lenk, S.FZJ* ; Mantl, S.FZJ*

2002
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/S0167-9317(01)00596-2

Abstract: Semiconducting iron disilicide precipitates in silicon were fabricated by ion beam synthesis and characterised by photoluminescence and TEM. We have measured the decay time of the 1.55-mum line, which was found to be 10 mus at 10 K. No evidence for a fast, direct transition could be found from the time resolved photoluminescence measurements, Furthermore, we have measured the electroluminescence decay time of a demonstrator FeSi2-Si light emitting device. This shows a fast time response of below 30 ns. (C) 2002 Elsevier Science B.V. All rights reserved.

Keyword(s): J ; semiconducting silicides (auto) ; iron disilicide (auto) ; optical properties (auto) ; luminescence (auto) ; decay time measurement (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)

Research Program(s):

1. Photovoltaik (E02)

Appears in the scientific report 2002

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