000023938 001__ 23938
000023938 005__ 20240708133713.0
000023938 0247_ $$2DOI$$a10.1016/S0167-9317(01)00596-2
000023938 0247_ $$2WOS$$aWOS:000173194900024
000023938 037__ $$aPreJuSER-23938
000023938 041__ $$aeng
000023938 082__ $$a620
000023938 084__ $$2WoS$$aEngineering, Electrical & Electronic
000023938 084__ $$2WoS$$aNanoscience & Nanotechnology
000023938 084__ $$2WoS$$aOptics
000023938 084__ $$2WoS$$aPhysics, Applied
000023938 1001_ $$0P:(DE-Juel1)132261$$aSchuller, B.$$b0$$uFZJ
000023938 245__ $$aLuminescence lifetime of the 1.5-µm emission of ß-FeSi2 precipitate layers in silicon
000023938 260__ $$a[S.l.] @$$bElsevier$$c2002
000023938 300__ $$a205 - 210
000023938 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000023938 3367_ $$2DataCite$$aOutput Types/Journal article
000023938 3367_ $$00$$2EndNote$$aJournal Article
000023938 3367_ $$2BibTeX$$aARTICLE
000023938 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000023938 3367_ $$2DRIVER$$aarticle
000023938 440_0 $$04347$$aMicroelectronic Engineering$$v60$$x0167-9317
000023938 500__ $$aRecord converted from VDB: 12.11.2012
000023938 520__ $$aSemiconducting iron disilicide precipitates in silicon were fabricated by ion beam synthesis and characterised by photoluminescence and TEM. We have measured the decay time of the 1.55-mum line, which was found to be 10 mus at 10 K. No evidence for a fast, direct transition could be found from the time resolved photoluminescence measurements, Furthermore, we have measured the electroluminescence decay time of a demonstrator FeSi2-Si light emitting device. This shows a fast time response of below 30 ns. (C) 2002 Elsevier Science B.V. All rights reserved.
000023938 536__ $$0G:(DE-Juel1)FUEK247$$2G:(DE-HGF)$$aPhotovoltaik$$cE02$$x0
000023938 588__ $$aDataset connected to Web of Science
000023938 650_7 $$2WoSType$$aJ
000023938 65320 $$2Author$$asemiconducting silicides
000023938 65320 $$2Author$$airon disilicide
000023938 65320 $$2Author$$aoptical properties
000023938 65320 $$2Author$$aluminescence
000023938 65320 $$2Author$$adecay time measurement
000023938 7001_ $$0P:(DE-Juel1)VDB4964$$aCarius, R.$$b1$$uFZJ
000023938 7001_ $$0P:(DE-Juel1)128602$$aLenk, S.$$b2$$uFZJ
000023938 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b3$$uFZJ
000023938 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/S0167-9317(01)00596-2$$gVol. 60, p. 205 - 210$$p205 - 210$$q60<205 - 210$$tMicroelectronic engineering$$v60$$x0167-9317$$y2002
000023938 909CO $$ooai:juser.fz-juelich.de:23938$$pVDB
000023938 9131_ $$0G:(DE-Juel1)FUEK247$$bEnergie$$kE02$$lErneuerbare Energien$$vPhotovoltaik$$x0
000023938 9141_ $$y2002
000023938 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000023938 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
000023938 970__ $$aVDB:(DE-Juel1)15027
000023938 980__ $$aVDB
000023938 980__ $$aConvertedRecord
000023938 980__ $$ajournal
000023938 980__ $$aI:(DE-Juel1)IEK-5-20101013
000023938 980__ $$aUNRESTRICTED
000023938 981__ $$aI:(DE-Juel1)IMD-3-20101013
000023938 981__ $$aI:(DE-Juel1)IEK-5-20101013