TY  - JOUR
AU  - Schuller, B.
AU  - Carius, R.
AU  - Lenk, S.
AU  - Mantl, S.
TI  - Luminescence lifetime of the 1.5-µm emission of ß-FeSi2 precipitate layers in silicon
JO  - Microelectronic engineering
VL  - 60
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - PreJuSER-23938
SP  - 205 - 210
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
AB  - Semiconducting iron disilicide precipitates in silicon were fabricated by ion beam synthesis and characterised by photoluminescence and TEM. We have measured the decay time of the 1.55-mum line, which was found to be 10 mus at 10 K. No evidence for a fast, direct transition could be found from the time resolved photoluminescence measurements, Furthermore, we have measured the electroluminescence decay time of a demonstrator FeSi2-Si light emitting device. This shows a fast time response of below 30 ns. (C) 2002 Elsevier Science B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000173194900024
DO  - DOI:10.1016/S0167-9317(01)00596-2
UR  - https://juser.fz-juelich.de/record/23938
ER  -