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@ARTICLE{Schuller:23938,
author = {Schuller, B. and Carius, R. and Lenk, S. and Mantl, S.},
title = {{L}uminescence lifetime of the 1.5-µm emission of
ß-{F}e{S}i2 precipitate layers in silicon},
journal = {Microelectronic engineering},
volume = {60},
issn = {0167-9317},
address = {[S.l.] @},
publisher = {Elsevier},
reportid = {PreJuSER-23938},
pages = {205 - 210},
year = {2002},
note = {Record converted from VDB: 12.11.2012},
abstract = {Semiconducting iron disilicide precipitates in silicon were
fabricated by ion beam synthesis and characterised by
photoluminescence and TEM. We have measured the decay time
of the 1.55-mum line, which was found to be 10 mus at 10 K.
No evidence for a fast, direct transition could be found
from the time resolved photoluminescence measurements,
Furthermore, we have measured the electroluminescence decay
time of a demonstrator FeSi2-Si light emitting device. This
shows a fast time response of below 30 ns. (C) 2002 Elsevier
Science B.V. All rights reserved.},
keywords = {J (WoSType)},
cin = {IPV},
ddc = {620},
cid = {I:(DE-Juel1)VDB46},
pnm = {Photovoltaik},
pid = {G:(DE-Juel1)FUEK247},
shelfmark = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
Nanotechnology / Optics / Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000173194900024},
doi = {10.1016/S0167-9317(01)00596-2},
url = {https://juser.fz-juelich.de/record/23938},
}