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| Home > Publications database > Luminescence lifetime of the 1.5-µm emission of ß-FeSi2 precipitate layers in silicon > print |
| 001 | 23938 | ||
| 005 | 20240708133713.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/S0167-9317(01)00596-2 |
| 024 | 7 | _ | |2 WOS |a WOS:000173194900024 |
| 037 | _ | _ | |a PreJuSER-23938 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Nanoscience & Nanotechnology |
| 084 | _ | _ | |2 WoS |a Optics |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Schuller, B. |b 0 |u FZJ |0 P:(DE-Juel1)132261 |
| 245 | _ | _ | |a Luminescence lifetime of the 1.5-µm emission of ß-FeSi2 precipitate layers in silicon |
| 260 | _ | _ | |a [S.l.] @ |b Elsevier |c 2002 |
| 300 | _ | _ | |a 205 - 210 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Microelectronic Engineering |x 0167-9317 |0 4347 |v 60 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Semiconducting iron disilicide precipitates in silicon were fabricated by ion beam synthesis and characterised by photoluminescence and TEM. We have measured the decay time of the 1.55-mum line, which was found to be 10 mus at 10 K. No evidence for a fast, direct transition could be found from the time resolved photoluminescence measurements, Furthermore, we have measured the electroluminescence decay time of a demonstrator FeSi2-Si light emitting device. This shows a fast time response of below 30 ns. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 536 | _ | _ | |a Photovoltaik |c E02 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK247 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a semiconducting silicides |
| 653 | 2 | 0 | |2 Author |a iron disilicide |
| 653 | 2 | 0 | |2 Author |a optical properties |
| 653 | 2 | 0 | |2 Author |a luminescence |
| 653 | 2 | 0 | |2 Author |a decay time measurement |
| 700 | 1 | _ | |a Carius, R. |b 1 |u FZJ |0 P:(DE-Juel1)VDB4964 |
| 700 | 1 | _ | |a Lenk, S. |b 2 |u FZJ |0 P:(DE-Juel1)128602 |
| 700 | 1 | _ | |a Mantl, S. |b 3 |u FZJ |0 P:(DE-Juel1)VDB4959 |
| 773 | _ | _ | |a 10.1016/S0167-9317(01)00596-2 |g Vol. 60, p. 205 - 210 |p 205 - 210 |q 60<205 - 210 |0 PERI:(DE-600)1497065-x |t Microelectronic engineering |v 60 |y 2002 |x 0167-9317 |
| 909 | C | O | |o oai:juser.fz-juelich.de:23938 |p VDB |
| 913 | 1 | _ | |k E02 |v Photovoltaik |l Erneuerbare Energien |b Energie |0 G:(DE-Juel1)FUEK247 |x 0 |
| 914 | 1 | _ | |y 2002 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IPV |l Institut für Photovoltaik |d 31.12.2006 |g IPV |0 I:(DE-Juel1)VDB46 |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)15027 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)IMD-3-20101013 |
| 981 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
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