%0 Journal Article
%A Myslivecek, J.
%A Schelling, C.
%A Springholz, G.
%A Schäffler, F.
%A Voigtländer, B.
%A Smilauer, P.
%T On the origin of the kinetic growth instability of homoepitaxy on Si(001)
%J Materials science and engineering / B
%V 89
%@ 0921-5107
%C New York, NY [u.a.]
%I Elsevier
%M PreJuSER-24640
%P 410 - 414
%D 2002
%Z Record converted from VDB: 12.11.2012
%X The recently observed kinetic growth instability of homoepitaxial layers on Si(001) was investigated by in-situ scanning tunneling microscopy (STM) experiments. In the step-flow, regime the instability consists of straight step bunches, and it vanishes both during two-dimensional (2-D) island growth and at high temperatures. Kinetic Monte Carlo (KMC) simulations were performed to identify the dominating mechanism causing the instability. Strong evidence for the presence of an asymmetric step-edge barrier with the behavior of an inverse Ehrlich-Schwoebel barrier is found. Comparison between the experiments and the simulations reveal that only double atomic height D-B steps, which form kinetically in a rather narrow temperature range, develop this type of step-edge barrier. (C) 2002 Published by Elsevier Science B.V.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000174015300087
%R 10.1016/S0921-5107(01)00844-3
%U https://juser.fz-juelich.de/record/24640