Journal Article

PreJuSER-24640

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png On the origin of the kinetic growth instability of homoepitaxy on Si(001)

Myslivecek, J.FZJ* ; Schelling, C. ; Springholz, G. ; Schäffler, F. ; Voigtländer, B.FZJ* ; Smilauer, P.

2002
Elsevier New York, NY [u.a.]

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Please use a persistent id in citations: doi:10.1016/S0921-5107(01)00844-3

Abstract: The recently observed kinetic growth instability of homoepitaxial layers on Si(001) was investigated by in-situ scanning tunneling microscopy (STM) experiments. In the step-flow, regime the instability consists of straight step bunches, and it vanishes both during two-dimensional (2-D) island growth and at high temperatures. Kinetic Monte Carlo (KMC) simulations were performed to identify the dominating mechanism causing the instability. Strong evidence for the presence of an asymmetric step-edge barrier with the behavior of an inverse Ehrlich-Schwoebel barrier is found. Comparison between the experiments and the simulations reveal that only double atomic height D-B steps, which form kinetically in a rather narrow temperature range, develop this type of step-edge barrier. (C) 2002 Published by Elsevier Science B.V.

Keyword(s): J ; step-bunching (auto) ; Si homoepitaxy (auto) ; Ehrlich-Schwoebel barrier (auto) ; kinetic Monte Carlo simulations (auto) ; scanning tunneling microscopy (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Methoden und Systeme der Informationstechnik (I02)
2. Kondensierte Materie (M02)

Appears in the scientific report 2002

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