TY  - JOUR
AU  - Myslivecek, J.
AU  - Schelling, C.
AU  - Springholz, G.
AU  - Schäffler, F.
AU  - Voigtländer, B.
AU  - Smilauer, P.
TI  - On the origin of the kinetic growth instability of homoepitaxy on Si(001)
JO  - Materials science and engineering / B
VL  - 89
SN  - 0921-5107
CY  - New York, NY [u.a.]
PB  - Elsevier
M1  - PreJuSER-24640
SP  - 410 - 414
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
AB  - The recently observed kinetic growth instability of homoepitaxial layers on Si(001) was investigated by in-situ scanning tunneling microscopy (STM) experiments. In the step-flow, regime the instability consists of straight step bunches, and it vanishes both during two-dimensional (2-D) island growth and at high temperatures. Kinetic Monte Carlo (KMC) simulations were performed to identify the dominating mechanism causing the instability. Strong evidence for the presence of an asymmetric step-edge barrier with the behavior of an inverse Ehrlich-Schwoebel barrier is found. Comparison between the experiments and the simulations reveal that only double atomic height D-B steps, which form kinetically in a rather narrow temperature range, develop this type of step-edge barrier. (C) 2002 Published by Elsevier Science B.V.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000174015300087
DO  - DOI:10.1016/S0921-5107(01)00844-3
UR  - https://juser.fz-juelich.de/record/24640
ER  -