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@ARTICLE{Myslivecek:24640,
author = {Myslivecek, J. and Schelling, C. and Springholz, G. and
Schäffler, F. and Voigtländer, B. and Smilauer, P.},
title = {{O}n the origin of the kinetic growth instability of
homoepitaxy on {S}i(001)},
journal = {Materials science and engineering / B},
volume = {89},
issn = {0921-5107},
address = {New York, NY [u.a.]},
publisher = {Elsevier},
reportid = {PreJuSER-24640},
pages = {410 - 414},
year = {2002},
note = {Record converted from VDB: 12.11.2012},
abstract = {The recently observed kinetic growth instability of
homoepitaxial layers on Si(001) was investigated by in-situ
scanning tunneling microscopy (STM) experiments. In the
step-flow, regime the instability consists of straight step
bunches, and it vanishes both during two-dimensional (2-D)
island growth and at high temperatures. Kinetic Monte Carlo
(KMC) simulations were performed to identify the dominating
mechanism causing the instability. Strong evidence for the
presence of an asymmetric step-edge barrier with the
behavior of an inverse Ehrlich-Schwoebel barrier is found.
Comparison between the experiments and the simulations
reveal that only double atomic height D-B steps, which form
kinetically in a rather narrow temperature range, develop
this type of step-edge barrier. (C) 2002 Published by
Elsevier Science B.V.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {600},
cid = {I:(DE-Juel1)VDB43},
pnm = {Methoden und Systeme der Informationstechnik / Kondensierte
Materie},
pid = {G:(DE-Juel1)FUEK253 / G:(DE-Juel1)FUEK242},
shelfmark = {Materials Science, Multidisciplinary / Physics, Condensed
Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000174015300087},
doi = {10.1016/S0921-5107(01)00844-3},
url = {https://juser.fz-juelich.de/record/24640},
}