000024644 001__ 24644
000024644 005__ 20180210132123.0
000024644 0247_ $$2DOI$$a10.1016/S0039-6028(02)02273-2
000024644 0247_ $$2WOS$$aWOS:000179515000008
000024644 037__ $$aPreJuSER-24644
000024644 041__ $$aeng
000024644 082__ $$a540
000024644 084__ $$2WoS$$aChemistry, Physical
000024644 084__ $$2WoS$$aPhysics, Condensed Matter
000024644 1001_ $$0P:(DE-Juel1)VDB9864$$aMyslivecek, J.$$b0$$uFZJ
000024644 245__ $$aOn the microscopic origin of the kinetic step bunching instability of vicinal Si(001)
000024644 260__ $$aAmsterdam$$bElsevier$$c2002
000024644 300__ $$a193 - 206
000024644 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000024644 3367_ $$2DataCite$$aOutput Types/Journal article
000024644 3367_ $$00$$2EndNote$$aJournal Article
000024644 3367_ $$2BibTeX$$aARTICLE
000024644 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000024644 3367_ $$2DRIVER$$aarticle
000024644 440_0 $$05673$$aSurface Science$$v520$$x0039-6028
000024644 500__ $$aRecord converted from VDB: 12.11.2012
000024644 520__ $$aA scanning tunneling microscopy/atomic force microscopy study is presented of a kinetically driven growth instability, which leads to the formation of ripples during Si homoepitaxy on slightly vicinal Si(001) surfaces miscut in [110] direction. The instability is identified as step bunching, that occurs under step-flow growth conditions and vanishes both during low-temperature island growth and at high temperatures. We demonstrate, that the growth instability with the same characteristics is observed in two dimensional kinetic Monte Carlo simulation with included Si(001)-like diffusion anisotropy. The instability is mainly caused by the interplay between diffusion anisotropy and the attachment/detachment kinetics at the different step types on Si(001) surface. This new instability mechanism does not require any additional step edge barriers to diffusion of adatoms. In addition, the evolution of ripple height and periodicity was analyzed experimentally as a function of layer thickness. A lateral "ripple-zipper" mechanism is proposed for the coarsening of the ripples. (C) 2002 Elsevier Science B.V. All rights reserved.
000024644 536__ $$0G:(DE-Juel1)FUEK253$$2G:(DE-HGF)$$aMethoden und Systeme der Informationstechnik$$cI02$$x0
000024644 588__ $$aDataset connected to Web of Science
000024644 650_7 $$2WoSType$$aJ
000024644 65320 $$2Author$$asilicon
000024644 65320 $$2Author$$avicinal single crystal surfaces
000024644 65320 $$2Author$$amolecular beam epitaxy
000024644 65320 $$2Author$$astep formation and bunching
000024644 65320 $$2Author$$ascanning tunneling microscopy
000024644 65320 $$2Author$$asurface structure, morphology, roughness and topography
000024644 65320 $$2Author$$aMonte Carlo simulations
000024644 65320 $$2Author$$asurface diffusion
000024644 7001_ $$0P:(DE-HGF)0$$aSchelling, C.$$b1
000024644 7001_ $$0P:(DE-HGF)0$$aSchäffler, F.$$b2
000024644 7001_ $$0P:(DE-HGF)0$$aSpringholz, G.$$b3
000024644 7001_ $$0P:(DE-HGF)0$$aSmilauer, P.$$b4
000024644 7001_ $$0P:(DE-HGF)0$$aKrug, J.$$b5
000024644 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b6$$uFZJ
000024644 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/S0039-6028(02)02273-2$$gVol. 520, p. 193 - 206$$p193 - 206$$q520<193 - 206$$tSurface science$$v520$$x0039-6028$$y2002
000024644 909CO $$ooai:juser.fz-juelich.de:24644$$pVDB
000024644 9131_ $$0G:(DE-Juel1)FUEK253$$bInformation$$kI02$$lInformationstechnologie mit nanoelektronischen Systemen$$vMethoden und Systeme der Informationstechnik$$x0
000024644 9141_ $$y2002
000024644 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000024644 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
000024644 970__ $$aVDB:(DE-Juel1)16027
000024644 980__ $$aVDB
000024644 980__ $$aConvertedRecord
000024644 980__ $$ajournal
000024644 980__ $$aI:(DE-Juel1)PGI-3-20110106
000024644 980__ $$aUNRESTRICTED
000024644 981__ $$aI:(DE-Juel1)PGI-3-20110106