% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Myslivecek:24644,
      author       = {Myslivecek, J. and Schelling, C. and Schäffler, F. and
                      Springholz, G. and Smilauer, P. and Krug, J. and
                      Voigtländer, B.},
      title        = {{O}n the microscopic origin of the kinetic step bunching
                      instability of vicinal {S}i(001)},
      journal      = {Surface science},
      volume       = {520},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-24644},
      pages        = {193 - 206},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A scanning tunneling microscopy/atomic force microscopy
                      study is presented of a kinetically driven growth
                      instability, which leads to the formation of ripples during
                      Si homoepitaxy on slightly vicinal Si(001) surfaces miscut
                      in [110] direction. The instability is identified as step
                      bunching, that occurs under step-flow growth conditions and
                      vanishes both during low-temperature island growth and at
                      high temperatures. We demonstrate, that the growth
                      instability with the same characteristics is observed in two
                      dimensional kinetic Monte Carlo simulation with included
                      Si(001)-like diffusion anisotropy. The instability is mainly
                      caused by the interplay between diffusion anisotropy and the
                      attachment/detachment kinetics at the different step types
                      on Si(001) surface. This new instability mechanism does not
                      require any additional step edge barriers to diffusion of
                      adatoms. In addition, the evolution of ripple height and
                      periodicity was analyzed experimentally as a function of
                      layer thickness. A lateral "ripple-zipper" mechanism is
                      proposed for the coarsening of the ripples. (C) 2002
                      Elsevier Science B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Methoden und Systeme der Informationstechnik},
      pid          = {G:(DE-Juel1)FUEK253},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000179515000008},
      doi          = {10.1016/S0039-6028(02)02273-2},
      url          = {https://juser.fz-juelich.de/record/24644},
}