Journal Article

PreJuSER-25274

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png The growth of ultrathin Al2O3 films on Cu(111)

Jeliazova, Y.FZJ* ; Franchy, R.FZJ*

2002
North-Holland Amsterdam

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Please use a persistent id in citations: doi:10.1016/S0169-4332(01)00773-5

Abstract: The growth of ultrathin films of Al2O3 on Cu(111) in the temperature range 300-1200 K was investigated by using Auger electron spectroscopy (AES), low-energy electron diffraction (LEED) and high-resolution electron energy loss spectroscopy (HREELS). Eight monolayers of a mixture of nickel and aluminum (Ni:Al = 1:2) were deposited on Cu(l 1 1) at 300 K by simultaneous evaporation of both Ni and Al from NiAl crystal material. The bimetal layer was oxidized at 300 K until saturation and annealed gradually to 1200 K. During oxygen adsorption, only aluminum is oxidized. Annealing of the oxidized layer to 1200 K leads to the formation of a well-ordered aluminum oxide. The HREEL spectra show the characteristic Fuchs-Kliever phonons of Al2O3 (410, 620 and 885 cm(-1)). During annealing, Ni diffuses into the Cu(I 1 1) substrate. The LEED pattern of the ultrathin oxide layer has a hexagonal structure with a lattice constant of 3.1 Angstrom, which corresponds to the distance between two oxygen ions in the aluminum oxide. (C) 2002 Elsevier Science B.V. All rights reserved.

Keyword(s): J ; aluminum oxide (auto) ; Auger electron spectroscopy (auto) ; low-energy electron diffraction (auto) ; high-resolution electron energy loss spectroscopy (auto) ; copper (auto) ; surface structure (auto) ; oxidation (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2002

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