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| 001 | 255620 | ||
| 005 | 20240625095031.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevB.92.104418 |2 doi |
| 024 | 7 | _ | |a 0163-1829 |2 ISSN |
| 024 | 7 | _ | |a 0556-2805 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2015-05755 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Thiess, Alexander |0 P:(DE-Juel1)130999 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Systematic study of the exchange interactions in Gd-doped GaN containing N interstitials, O interstitials, or Ga vacancies |
| 260 | _ | _ | |a College Park, Md. |c 2015 |b APS |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 536 | _ | _ | |a 142 - Controlling Spin-Based Phenomena (POF3-142) |0 G:(DE-HGF)POF3-142 |c POF3-142 |f POF III |x 0 |
| 536 | _ | _ | |a 143 - Controlling Configuration-Based Phenomena (POF3-143) |0 G:(DE-HGF)POF3-143 |c POF3-143 |f POF III |x 1 |
| 536 | _ | _ | |a Quantum description of nanoscale processes in materials science (jiff02_20120501) |0 G:(DE-Juel1)jiff02_20120501 |c jiff02_20120501 |f Quantum description of nanoscale processes in materials science |x 2 |
| 542 | _ | _ | |i 2015-09-17 |2 Crossref |u http://link.aps.org/licenses/aps-default-license |
| 542 | _ | _ | |i 2016-09-16 |2 Crossref |u http://link.aps.org/licenses/aps-default-accepted-manuscript-license |
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| 700 | 1 | _ | |a Blügel, Stefan |0 P:(DE-Juel1)130548 |b 1 |u fzj |
| 700 | 1 | _ | |a Dederichs, Peter H. |0 P:(DE-Juel1)130612 |b 2 |u fzj |
| 700 | 1 | _ | |a Zeller, Rudolf |0 P:(DE-Juel1)131057 |b 3 |u fzj |
| 700 | 1 | _ | |a Lambrecht, Walter R. L. |0 P:(DE-HGF)0 |b 4 |
| 773 | 1 | 8 | |a 10.1103/physrevb.92.104418 |b American Physical Society (APS) |d 2015-09-17 |n 10 |p 104418 |3 journal-article |2 Crossref |t Physical Review B |v 92 |y 2015 |x 1098-0121 |
| 773 | _ | _ | |a 10.1103/PhysRevB.92.104418 |g Vol. 92, no. 10, p. 104418 |0 PERI:(DE-600)2844160-6 |n 10 |p 104418 |t Physical review / B |v 92 |y 2015 |x 1098-0121 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/255620/files/PhysRevB.92.104418.pdf |y OpenAccess |
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| 913 | 1 | _ | |a DE-HGF |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-140 |0 G:(DE-HGF)POF3-142 |2 G:(DE-HGF)POF3-100 |v Controlling Spin-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |b Energie |
| 913 | 1 | _ | |a DE-HGF |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-140 |0 G:(DE-HGF)POF3-143 |2 G:(DE-HGF)POF3-100 |v Controlling Configuration-Based Phenomena |x 1 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |b Energie |
| 914 | 1 | _ | |y 2015 |
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| 999 | C | 5 | |a 10.1103/PhysRevLett.94.037205 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.72.245203 |9 -- missing cx lookup -- |2 Crossref |
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| 999 | C | 5 | |a 10.1016/S0038-1098(02)00228-4 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 H. Asahi |y 2011 |2 Crossref |t Magnetism and Correlated Electronic Structure of Nitrides—Rare-Earth and Transition Metals as Constituents and Dopants |o H. Asahi Magnetism and Correlated Electronic Structure of Nitrides—Rare-Earth and Transition Metals as Constituents and Dopants 2011 |
| 999 | C | 5 | |a 10.1063/1.2841657 |9 -- missing cx lookup -- |2 Crossref |
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| 999 | C | 5 | |1 W. R. L. Lambrecht |y 2006 |2 Crossref |t Advances in III-V Nitride Semiconductor Materials and Devices |o W. R. L. Lambrecht Advances in III-V Nitride Semiconductor Materials and Devices 2006 |
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