Journal Article

FZJ-2015-05755

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Systematic study of the exchange interactions in Gd-doped GaN containing N interstitials, O interstitials, or Ga vacancies

Thiess, A. (Corresponding author) ; Blügel, S.FZJ* ; Dederichs, P. H.FZJ* ; Zeller, R.FZJ* ; Lambrecht, W. R. L.

2015
APS College Park, Md.

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/10787  doi:10.1103/PhysRevB.92.104418

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (IAS-1)
2. Quanten-Theorie der Materialien (PGI-1)
3. JARA-FIT (JARA-FIT)
4. Theoretische Nanoelektronik (PGI-2)
5. Theoretische Nanoelektronik (IAS-3)
6. JARA - HPC (JARA-HPC)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)
2. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)
3. Quantum description of nanoscale processes in materials science (jiff02_20120501) (jiff02_20120501)

Appears in the scientific report 2015

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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