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@INPROCEEDINGS{Richter:255639,
      author       = {Richter, Alexei and Lentz, Florian and Meier, Matthias and
                      Ding, Kaining},
      title        = {{L}ight {M}anagement in {S}ilicon {H}eterojunction {S}olar
                      {C}ells via {N}anocrystalline {S}ilicon {O}xide {F}ilms and
                      {N}ano-{I}mprint {T}extures},
      reportid     = {FZJ-2015-05773},
      year         = {2015},
      abstract     = {Excellent light management is essential to increase the
                      amount of light being captured in the absorber of silicon
                      heterojunction solar cells in order to obtain a high
                      photoelectric current. Three possible ways to achieve this
                      are improving the cell anti-reflectance, increasing the
                      light path through the absorber material, and minimizing the
                      parasitic losses in the other layers. The former two goals
                      can be realized via surface texturing and the latter by
                      using highly transparent materials. In this study, we focus
                      on implementing hydrogenated nanocrystalline silicon oxide
                      (nc‑SiOx:H) in combination with front side nano-imprint
                      textures in silicon heterojuction solar cells. Nc‑SiOx:H
                      offering a unique combination of high conductivity and high
                      transparency is perfectly suited as an alternative wide-gap
                      doped layer to minimize parasitic absorption. At the same
                      time, nano-imprint technology provides a way to realize
                      various textures on “flat” silicon solar cells without
                      inevitably promoting recombination at the absorber interface
                      by enlarging the surface area and increasing the number of
                      defect states. We show by a systematic investigation how the
                      interplay between the imprinted layer and the underlying
                      thin films of the silicon heterojunction based solar cell
                      affects the generated current. Ultimately, we demonstrate
                      very high current densities and efficiencies beyond $20\%$
                      without wet-chemically texturing the Si-wafer by combining
                      the benefits of the highly transparent nanocrystalline
                      silicon oxide layers and the favourable properties of the
                      nano-imprint technology.},
      month         = {Sep},
      date          = {2015-09-13},
      organization  = {26th International Conference on
                       Amorphous and Nanocrystalline
                       Semiconductors, Aachen (Germany), 13
                       Sep 2015 - 18 Sep 2015},
      subtyp        = {Other},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/255639},
}