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000255938 1001_ $$0P:(DE-HGF)0$$aDíaz Álvarez, Adrian$$b0
000255938 245__ $$aNonstoichiometric Low-Temperature Grown GaAs Nanowires
000255938 260__ $$aWashington, DC$$bACS Publ.$$c2015
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000255938 520__ $$aThe structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump–probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.
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000255938 7001_ $$0P:(DE-HGF)0$$aXu, Tao$$b1
000255938 7001_ $$0P:(DE-HGF)0$$aTütüncüoglu, Gözde$$b2
000255938 7001_ $$0P:(DE-HGF)0$$aDemonchaux, Thomas$$b3
000255938 7001_ $$0P:(DE-HGF)0$$aNys, Jean-Philippe$$b4
000255938 7001_ $$0P:(DE-HGF)0$$aBerthe, Maxime$$b5
000255938 7001_ $$0P:(DE-HGF)0$$aMatteini, Federico$$b6
000255938 7001_ $$0P:(DE-HGF)0$$aPotts, Heidi A.$$b7
000255938 7001_ $$0P:(DE-HGF)0$$aTroadec, David$$b8
000255938 7001_ $$0P:(DE-HGF)0$$aPatriarche, Gilles$$b9
000255938 7001_ $$0P:(DE-HGF)0$$aLampin, Jean-François$$b10
000255938 7001_ $$0P:(DE-HGF)0$$aCoinon, Christophe$$b11
000255938 7001_ $$0P:(DE-HGF)0$$aFontcuberta i Morral, Anna$$b12
000255938 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b13
000255938 7001_ $$0P:(DE-Juel1)130627$$aEbert, Philipp$$b14
000255938 7001_ $$0P:(DE-HGF)0$$aGrandidier, Bruno$$b15$$eCorresponding author
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