Journal Article

FZJ-2015-06017

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Díaz Álvarez, A. ; Xu, T. ; Tütüncüoglu, G. ; Demonchaux, T. ; Nys, J.-P. ; Berthe, M. ; Matteini, F. ; Potts, H. A. ; Troadec, D. ; Patriarche, G. ; Lampin, J.-F. ; Coinon, C. ; Fontcuberta i Morral, A. ; Dunin-Borkowski, R.FZJ* ; Ebert, P.FZJ* ; Grandidier, B. (Corresponding author)

2015
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acs.nanolett.5b01802

Abstract: The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump–probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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