TY  - JOUR
AU  - Díaz Álvarez, Adrian
AU  - Xu, Tao
AU  - Tütüncüoglu, Gözde
AU  - Demonchaux, Thomas
AU  - Nys, Jean-Philippe
AU  - Berthe, Maxime
AU  - Matteini, Federico
AU  - Potts, Heidi A.
AU  - Troadec, David
AU  - Patriarche, Gilles
AU  - Lampin, Jean-François
AU  - Coinon, Christophe
AU  - Fontcuberta i Morral, Anna
AU  - Dunin-Borkowski, Rafal
AU  - Ebert, Philipp
AU  - Grandidier, Bruno
TI  - Nonstoichiometric Low-Temperature Grown GaAs Nanowires
JO  - Nano letters
VL  - 15
IS  - 10
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2015-06017
SP  - 6440–6445
PY  - 2015
AB  - The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump–probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000363003100023
DO  - DOI:10.1021/acs.nanolett.5b01802
UR  - https://juser.fz-juelich.de/record/255938
ER  -